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GaN Challenge Si device market

According to market research company Yole Developpement, 2007 year gallium nitride (GaN) RF device market to 1,700 million. 65% of the market belongs to R & D, 17% of the national defense and satellite, 16% are 3G base stations and 2% are LTE / WiMax applications.

As the GaN in the LTE / WiMax strong field of infiltration, Yole forecasts GaN RF transistor market growth in 2010 to 1 billion U.S. dollars, and in 2008 was about 3,000 million. This means that the 2008-2010 compound annual growth rate of 80%.

Yole forecasts, in 2012 the proportion of GaN R & D market will drop to 6%, the proportion of national defense and satellite will increase to 27%, 3G base stations, the proportion will rise to 31%, LTE and WiMax share will rise to 29% . Broadcasting market will account for 4%. 2012 Yole not predict how much GaN market will reach the scale.

Yole compound semiconductor program manager Philippe Roussel said in a statement: “These GaN devices are currently challenge the field of silicon in the industry’s leading position in the industry in 2008 is expected to power semiconductor market size of about 900 million U.S. dollars.”

Until 2005, accounting for 2-GHz silicon LDMOS or higher frequency of high power RF amplification applications in the ratio is about 90%, the rest of the market occupied by a GaAs pHEMT technology.

Via: GaN Challenge Si device market

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